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Shortly before joining Crystal IS, Inc. in 2005, Dr. Smart earned his Ph.D. in Electro-Physics from Cornell University. His qualifications are extensive, including hands-on working experience in the industry on design, epi-growth and characterization of GaN. Dr. Smart has 4 pending patents for various GaN techniques and 1 patent on Epitaxial Overgrowth of GaN.
He began his career in 1988 at Micron Technology as a Product Engineer Silicon Research and Development. His subsequent engineering and management experience prepared him to become Director of GaN Materials/Technology, Infrastructure Product Line at RF Micro Devices in North Carolina. | 