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Dr. Slack spent much of his career as a scientist at the GE Research and Development Center and is a former Research Professor in Physics at the Rensselaer Polytechnic Institute (RPI). He has over 40 years of experience in wide-bandgap semiconductor crystal growth and characterization and is one of the pioneers who first demonstrated the possibility of bulk AlN crystal growth by the sublimation-recondensation method in the 1970s. Dr. Slack has published over 110 papers and several review articles in these various fields of interest and has received both the Guggenheim and the Coolidge Fellowships for his work in solid-state physics. He received his Ph.D. in Physics from Cornell University in 1956 | 